one watt darlington transistors npn silicon maximum ratings rating symbol mps6724 mps6725 unit collectoremitter voltage v ces 40 50 vdc collectorbase voltage v cbo 50 60 vdc emitterbase voltage v ebo 12 vdc collector current e continuous i c 1000 madc total device dissipation @ t a = 25 c derate above 25 c p d 1.0 8.0 watts mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 2.5 20 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 125 c/w thermal resistance, junction to case r jc 50 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (1) (i c = 1.0 madc, i b = 0) mps6724 mps6725 v (br)ces 40 50 e e vdc collectorbase breakdown voltage (i c = 1.0 adc, i e = 0) mps6724 mps6725 v (br)cbo 50 60 e e vdc emitterbase breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 12 e vdc collector cutoff current (v cb = 30 vdc, i e = 0) mps6724 (v cb = 40 vdc, i e = 0) mps6725 i cbo e e 100 100 nadc emitter cutoff current (v eb = 10 vdc, i c = 0) i ebo e 100 nadc 1. pulse test: pulse width 300 s; duty cycle 2.0%. ? semiconductor components industries, llc, 2001 march, 2001 rev. 2 1 publication order number: mps6724/d mps6724 mps6725 case 2905, style 1 to92 (to226ae) 1 2 3 collector 3 base 2 emitter 1
mps6724 mps6725 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (1) dc current gain (i c = 200 madc, v ce = 5.0 vdc) (i c = 1000 madc, v ce = 5.0 vdc) h fe 25,000 4,000 e 40,000 e collectoremitter saturation voltage (i c = 1000 madc, i b = 2.0 madc) v ce(sat) e 1.5 vdc baseemitter on voltage (i c = 1000 madc, v ce = 5.0 vdc) v be(on) e 2.0 vdc smallsignal characteristics currentgain bandwidth product (i c = 200 madc, v ce = 5.0 vdc, f = 100 mhz) f t 100 1000 mhz collectorbase capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c cb e 10 pf 1. pulse test: pulse width 300 s; duty cycle 2.0%. typical characteristics 500 5.0 i c , collector current (ma) 200 k 100 k 70 k i b , base current ( a) 5.0 50 2.0 1.0 0.5 h fe , dc current gain , collector emitter voltage (volts) 50 k 20 k 30 10 20 100 200 10 20 0.5 1.0 2.0 1.5 2.5 3.0 0.1 0.2 100 v ce t j = 125 c t j = 25 c i c = 50 ma i c = 10 ma i c = 500 ma i c = 250 ma 1.5 v ce , collector-emitter voltage (volts) 3.0 k 2.0 k 1.0 k 500 200 20 i c , collector current (ma) 2.0 5.0 30 current limit thermal limit second breakdown limit 10 t a = 25 c t c = 25 c 1.0 ms 1.0 s 100 s figure 1. active region e safe operating area figure 2. dc current gain figure 3. collector saturation region 7.0 70 50 300 10 k 7.0 k 5.0 k 2.0 k 30 k 3.0 k v ce = 5.0 v -55 c 25 c 500 200 1000 duty cycle 10%
mps6724 mps6725 http://onsemi.com 3 1.0 5.0 0.5 i c , collector current (ma) 2.0 1.0 0.8 0.6 0.2 v r , reverse voltage (volts) 0.04 10 20 7.0 5.0 2.0 2.0 , small-signal current gain h fe 10 500 20 4.0 0.1 40 1.0 3.0 c, capacitance (pf) t j = 25 c c obo c ibo v ce = 5.0 v t j = 25 c f = 100 mhz 100 500 i c , collector current (ma) 0.6 1.6 1.4 1.2 1.0 0.8 i c , collector current (ma) -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 200 v, voltage (volts) 5.0 10 20 50 t j = 25 c 100 500 5.0 200 7.0 10 20 50 vb for v be v ce(sat) @ i c /i b = 1000 v be(on) @ v ce = 5.0 v , temperature coefficients (mv/ c) v figure 4. aono voltages figure 5. temperature coefficients figure 6. high frequency current gain figure 7. capacitance v be(sat) @ i c /i b = 1000 7.0 300 30 70 300 30 70 vc for v ce(sat) 25 c to 125 c -55 c to 25 c 25 c to 125 c -55 c to 25 c *applies for i c /i b h fe /3.0 0.2 0.4 2.0 4.0 20 10 0.4 50 100 200
mps6724 mps6725 http://onsemi.com 4 package dimensions style 1: pin 1. emitter 2. base 3. collector case 02905 (to226ae) issue ad r a p l f b k g h c v n n xx seating plane 1 j section xx d 23 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimensions d and j apply between l and k mimimum. lead dimension is uncontrolled in p and beyond dimension k minimum. dim min max min max millimeters inches a 0.175 0.205 4.44 5.21 b 0.290 0.310 7.37 7.87 c 0.125 0.165 3.18 4.19 d 0.018 0.022 0.46 0.56 f 0.016 0.019 0.41 0.48 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.018 0.024 0.46 0.61 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.135 --- 3.43 --- v 0.135 --- 3.43 --- on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mps6724/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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